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554073

Sigma-Aldrich

Rubrene

≥98%

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Synonym(s):
5,6,11,12-Tetraphenylnaphthacene
Empirical Formula (Hill Notation):
C42H28
CAS Number:
Molecular Weight:
532.67
Beilstein/REAXYS Number:
1917339
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

assay

≥98%

mp

330-335 °C (lit.)

λmax

299 nm
460 nm (2nd)

SMILES string

c1ccc(cc1)-c2c3ccccc3c(-c4ccccc4)c5c(-c6ccccc6)c7ccccc7c(-c8ccccc8)c25

InChI

1S/C42H28/c1-5-17-29(18-6-1)37-33-25-13-14-26-34(33)39(31-21-9-3-10-22-31)42-40(32-23-11-4-12-24-32)36-28-16-15-27-35(36)38(41(37)42)30-19-7-2-8-20-30/h1-28H

InChI key

YYMBJDOZVAITBP-UHFFFAOYSA-N

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1 of 4

This Item
551112932450776262
vibrant-m

554073

Rubrene

vibrant-m

551112

Rubrene

vibrant-m

932450

Rubrene

λmax

299 nm, 460 nm (2nd)

λmax

299 nm

λmax

299 nm

λmax

-

assay

≥98%

assay

99.99% trace metals basis

assay

≥99% (HPLC)

assay

98%

mp

330-335 °C (lit.)

mp

330-335 °C (lit.)

mp

330-335 °C (lit.)

mp

110-115 °C

General description

Rubrene is a tetraphenyl derivative of tetracene that is used as an organic semiconductor. It is used as a source material in the fabrication of rubrene single crystal based transistors with carrier mobility over 10 cm2V−1s−1.

Application

Rubrene based thin films are used as semiconducting layers along with poly(vinylidene fluoride-terefluoroethylene) (PVDF-TeFE) as insulating layers for the fabrication of ferro-electric gate field effect transistors (FETs). It may also be used as high mobility transporting material in the development of single crystal FETs.
Reagent for chemiluminescence research and for transition metal complex ligation.

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)


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Customers Also Viewed

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Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
Stassen AF, et al.
Applied Physics Letters, 85(17), 3899-3901 (2004)
High performance of rubrene thin film transistor by weak epitaxy growth method
Chang H, et al.
Organic Electronics, 20, 43-48 (2015)
Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film
Kanashima T, et al.
Japanese Journal of Applied Physics, 53(4S), 04ED11-04ED11 (2014)
Field-effect transistors on rubrene single crystals with parylene gate insulator
Podzorov V, et al.
Applied Physics Letters, 82(11), 1739-1741 (2003)
Intrinsic charge transport on the surface of organic semiconductors
Podzorov V, et al.
Physical Review Letters, 93(8), 086602-086602 (2004)

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