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Showing 1-30 of 34 results for "241903" within Papers
Simona Petroni et al.
The Analyst, 137(22), 5260-5264 (2012-09-27)
The integration of a polycrystalline material such as aluminum nitride (AlN) on a flexible substrate allows the realization of elastic tactile sensors showing both piezoelectricity and significant capacitive variation under normal stress. The application of a normal stress on AlN
Novel hybrid composite phase change materials with high thermal performance based on aluminium nitride and nanocapsules
Lu Wang, et al.
Energy, 238, 121775-121775 (2022)
Matthias Stegmaier et al.
Optics express, 21(6), 7304-7315 (2013-04-03)
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction and polarization of evanescently coupled waveguide modes is
A Lupu et al.
Optics express, 20(11), 12541-12549 (2012-06-21)
The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 µm. The variation
Chang-wen Zhang et al.
Journal of computational chemistry, 32(14), 3122-3128 (2011-08-05)
Based on first-principles calculations, the geometric, electronic, and magnetic properties as well as the relative stability of the fully hydrogenated and semihydrogenated AlN nanosheets (NSs) have been investigated. The results show that different with the bare graphite-like AlN NSs terminating
Ruyen Ro et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 46-51 (2009-12-31)
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al
Emmanuel Defay et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 58(12), 2516-2520 (2011-12-01)
A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to
Electricity generation based on one-dimensional group-III nitride nanomaterials.
Xuebin Wang et al.
Advanced materials (Deerfield Beach, Fla.), 22(19), 2155-2158 (2010-06-22)
Ning Liu et al.
ACS applied materials & interfaces, 1(9), 1927-1930 (2010-04-02)
Patterned growth of AlN nanocones on a Ni-coated Si substrate is demonstrated through the reaction between AlCl(3) and NH(3) at 700 degrees C with Mo grid as a mask. The AlN nanocones are selectively deposited in the hollow region of
Olivier Pellerin et al.
Journal of vascular and interventional radiology : JVIR, 24(2), 284-288 (2012-12-04)
To prospectively evaluate the outcomes of ALN inferior vena cava (IVC) filter extractions after long-term implantation (ie,>1 y). Between November 2004 and January 2011, 503 retrievable ALN IVC filters were implanted, but only 188 (37%) were addressed for removal. Because
Javad Beheshtian et al.
Journal of molecular modeling, 18(10), 4745-4750 (2012-06-09)
Single-walled aluminum nitride nanotubes (AlNNTs) are introduced as an electronic sensor for detection of sulfur dioxide (SO₂) molecules based on density functional theory calculations. The proposed sensor benefits from several advantages including high sensitivity: HOMO-LUMO energy gap of the AlNNT
Mohammad T Baei et al.
Journal of molecular modeling, 18(9), 4477-4489 (2012-05-31)
Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level
Norio Iizuka et al.
Optics express, 17(25), 23247-23253 (2010-01-07)
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size
Experimental investigation on thermal conductivity and viscosity of aluminum nitride nanofluid
Wei Yu,et al.
Particuology, 9(2), 187-191 (2011)
Glass foams for environmental applications
R. Lebullenger, et al.
Journal of Non-Crystalline Solids, 356(44), 2562-2568 (2010)
Interaction potential for aluminum nitride: A molecular dynamics study of mechanical and thermal properties of crystalline and amorphous aluminum nitride
Vashishta, et al.
Journal of Applied Physics, 109(3), 033514-033514 (2011)
Sangbok Park et al.
Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual Conference, 2012, 5683-5686 (2013-02-01)
In this paper, we present an antenna system for microwave non-invasive hyperthermia lipolysis. The antenna system consists of a circular waveguide antenna radiating electromagnetic waves, AlN (Aluminum Nitride) radome and heat sink. The AlN radome with heat sink helps to
Udo Christian Kaletta et al.
Ultrasonics, 54(1), 291-295 (2013-05-21)
A simulation study of Rayleigh wave devices based on a stacked AlN/SiO₂/Si(100) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrodes and different layer thicknesses
Elad Gross et al.
Optics express, 21(3), 3800-3808 (2013-03-14)
We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carried out through a novel interferometric technique. The measured interferogram yields a change in
Wolfram H P Pernice et al.
Optics express, 20(11), 12261-12269 (2012-06-21)
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality optical resonators. In the telecoms C-band (1520-1580 nm), we obtain
Band structure and fundamental optical transitions in wurtzite AlN
Li, Jing, et al.
Applied Physics Letters, 83(25), 5163-5165 (2003)
Mohammad T Baei et al.
Journal of molecular modeling, 18(9), 4427-4436 (2012-05-17)
Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the
J Hees et al.
Nanotechnology, 24(2), 025601-025601 (2012-12-12)
Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline
Javad Beheshtian et al.
Journal of molecular modeling, 18(6), 2653-2658 (2011-11-17)
The stability, geometry and electronic structure of the title nanoclusters were compared by using density functional theory (DFT) calculations. Their electrical property analysis showed that the relative magnitude of the HOMO-LUMO gaps (eV) that are average values from the calculated
Chengjie Zuo et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 82-87 (2009-12-31)
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor
Fang Qian et al.
Nano letters, 12(6), 3344-3350 (2012-05-19)
We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire heterostructures by metal-organic chemical vapor deposition. The structure consists of a single-crystal GaN nanowire core and an epitaxially grown (AlN/GaN)(m) (m = 3, 13) MQW shell. Optical excitation
Lixia Qin et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(4), 045801-045801 (2012-12-19)
The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the
Javad Beheshtian et al.
Journal of molecular modeling, 18(6), 2343-2348 (2011-10-08)
The thermodynamic and kinetic feasibility of H(2) dissociation on the BN, AlN, BP and AlP zigzag nanotubes has been investigated theoretically by calculating the dissociation and activation energies. We determined the BN and AlP tubes to be inert toward H(2)
Yong-Bing Tang et al.
ACS nano, 5(5), 3591-3598 (2011-04-13)
Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent
Advanced ceramic matrix composites for high energy x-ray generation
Khan, Amir Azam and Labbe, Jean Claude
10th Internatl. Conf. on Organic Synthesis, Bangalore, India, December 1994, 2(4), 045015-045015 (2012)
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