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237264

Sigma-Aldrich

Resolve-Al La

99%

Synonym(s):

La(tmhd)3, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum

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About This Item

Linear Formula:
La(OCC(CH3)3CHCOC(CH3)3)3
CAS Number:
14319-13-2
Molecular Weight:
688.71
MDL number:
MFCD00010466
UNSPSC Code:
12142201
PubChem Substance ID:
24854230
NACRES:
NA.21

Assay

99%

form

powder or crystals

bp

370 °C (lit.)

mp

128-131 °C (lit.)

SMILES string

CC(C)(C)C(=O)\C=C(/O[Yb](O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)C(C)(C)C

InChI

1S/3C11H20O2.La/c3*1-10(2,3)8(12)7-9(13)11(4,5)6;/h3*7,12H,1-6H3;/q;;;+3/p-3/b3*8-7-;

InChI key

IXHLTRHDDMSNAP-LWTKGLMZSA-K

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Legal Information

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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MOCVD of lanthanum oxides from La (tmhd)3 and La (tmod)3 precursors: A thermal and kinetic investigation.
Bedoya C, et al.
Chem. Vap. Deposition, 12(1), 46-53 (2006)
Structural and electrical properties of a La2O3 thin film as a gate dielectric.
Jun JH, et al.
The Journal of the Korean Physical Society, 11(6) (2002)
Study on the precursors for La2O3 thin films deposited on silicon substrate.
Jun J, et al.
Journal of Materials Science Letters, 21(23), 1847-1849 (2002)

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