266809
Hafnium
turnings, crystal bar, 99.7% trace metals basis
Synonym(s):
Celtium, Hafnium element
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About This Item
Empirical Formula (Hill Notation):
Hf
CAS Number:
Molecular Weight:
178.49
MDL number:
UNSPSC Code:
12141718
PubChem Substance ID:
NACRES:
NA.23
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Assay
99.7% trace metals basis
form
turnings, crystal bar
resistivity
29.6 μΩ-cm, 0°C
bp
4602 °C (lit.)
mp
2227 °C (lit.)
density
13.3 g/cm3 (lit.)
SMILES string
[Hf]
InChI
1S/Hf
InChI key
VBJZVLUMGGDVMO-UHFFFAOYSA-N
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Related Categories
Storage Class Code
11 - Combustible Solids
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
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Yu Gong et al.
Dalton transactions (Cambridge, England : 2003), 41(38), 11706-11715 (2012-08-18)
The isolated group 4 metal oxydifluoride molecules OMF(2) (M = Ti, Zr, Hf) with terminal oxo groups are produced specifically on the spontaneous reactions of metal atoms with OF(2) through annealing in solid argon. The product structures and vibrational spectra
V Braic et al.
Journal of the mechanical behavior of biomedical materials, 10, 197-205 (2012-04-24)
Multi-principal-element (TiZrNbHfTa)N and (TiZrNbHfTa)C coatings were deposited on Ti6Al4V alloy by co-sputtering of Ti, Zr, Nb, Hf and Ta metallic targets in reactive atmosphere. The coatings were analyzed for elemental and phase compositions, crystalline structure, morphology, residual stress, hardness, friction
Byung-Hak Moon et al.
Journal of nanoscience and nanotechnology, 11(8), 7428-7432 (2011-11-23)
In this study, we investigated the electrochemical oxide nanotube formation on the Ti-35Ta-xHf alloys for dental materials. The Ti-35Ta-xHf alloys contained from 3 wt.% to 15 wt.% Hf were manufactured by arc melting furnace. The nanotube oxide layers were formed
Michael J Sgro et al.
Chemical communications (Cambridge, England), 49(26), 2610-2612 (2013-02-07)
Hf-phosphinoamide cation complexes behave as metal-based frustrated Lewis pairs and bind one or two equivalent of CO2 and in as well can activate CO2 in a bimetallic fashion to give a pseudo-tetrahedral P2CO2 fragment linking two Hf centres.
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
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