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244651

Sigma-Aldrich

Tin(IV) oxide

−325 mesh, 99.9% trace metals basis

Synonym(s):

Stannic oxide

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About This Item

Linear Formula:
SnO2
CAS Number:
Molecular Weight:
150.71
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

99.9% trace metals basis

form

powder

particle size

−325 mesh

density

6.95 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[Sn]=O

InChI

1S/2O.Sn

InChI key

XOLBLPGZBRYERU-UHFFFAOYSA-N

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General description

Tin(IV) oxide (SnO2) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.

Application

Tin(IV) oxide has been used to prepare thin films of TiO2-doped SnO2 oxide nanocomposites.

It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

244651-2KG:4548173933658
244651-BULK:
244651-100G:4548173933641
244651-500G:4548173933665
244651-VAR:


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Gun-Joo Sun et al.
Nanotechnology, 24(2), 025504-025504 (2012-12-15)
Networked SnO(2) nanowire sensors were achieved using the selective growth of SnO(2) nanowires and their tangling ability, particularly on on-chip V-groove structures, in an effort to overcome the disadvantages imposed on the conventional trench-structured SnO(2) nanowire sensors. The sensing performance
Li-Ping Li et al.
Chemical communications (Cambridge, England), 49(17), 1762-1764 (2013-01-25)
ZnSn(OH)(6) and binary-component SnO(2)-ZnSn(OH)(6) were introduced as affinity probes for phosphopeptide enrichment for the first time. Two strategies, either ZnSn(OH)(6) and SnO(2) serial enrichment or binary-component SnO(2)-ZnSn(OH)(6) enrichment in a single run, were proposed to enhance multi-phosphopeptide enrichment and to
Dawei Su et al.
Chemical communications (Cambridge, England), 49(30), 3131-3133 (2013-03-13)
An in situ hydrothermal synthesis approach has been developed to prepare SnO2@graphene nanocomposites. The nanocomposites exhibited a high reversible sodium storage capacity of above 700 mA h g(-1) and excellent cyclability for Na-ion batteries. In particular, they also demonstrated a
Jaewon Jang et al.
Advanced materials (Deerfield Beach, Fla.), 25(7), 1042-1047 (2012-11-20)
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages
Hui Song et al.
Nanoscale, 5(3), 1188-1194 (2013-01-10)
One-dimensional (1-D) SnO(2) nanorods (NRs) with a rutile structure are grown on various substrates regardless of the lattice-mismatch by using a new nutrient solution based on tin oxalate, which generated supersaturated Sn(2+) sources. These affluent sources are appropriate for producing

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