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651494

Sigma-Aldrich

Gallium phosphide

(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monophosphide

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About This Item

Linear Formula:
GaP
CAS Number:
12063-98-8
Molecular Weight:
100.70
EC Number:
235-057-2
MDL number:
MFCD00016109
UNSPSC Code:
12352300
PubChem Substance ID:
24883833
NACRES:
NA.23

Quality Level

100

form

(single crystal substrate)

resistivity

~0.3 Ω-cm

diam. × thickness

2 in. × 0.5 mm

mp

1480 °C

density

4.13 g/mL at 25 °C

semiconductor properties

<111>

SMILES string

[P]#[Ga]

InChI

1S/Ga.P

InChI key

HZXMRANICFIONG-UHFFFAOYSA-N

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Physical properties

Thermal expansion: 5.3 x 10-6/°C
Undoped (N-type semiconductor), carrier concentration = 2-6 × 1016 cm-3, EPD < 3 × 105 cm-2, growth technique = LEC

Physical form

cubic (a = 5.4505Å)

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H319,H335

Hazard Classifications

Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

JAN Code

651494-VAR:
651494-1EA:
651494-BULK:

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Certificates of Analysis (COA)

Lot/Batch Number
MKBX6897V
MKBW8491V
10819AD

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Marcos Paulo Pinheiro Ferreira et al.
Photomedicine and laser surgery, 27(6), 901-906 (2009-08-25)
To evaluate the effect of phototherapy on the viability of cultured C2C12 myoblasts under different nutritional conditions (muscle injury model) using low-energy gallium-aluminum-arsenide (GaAlAs) and aluminium-gallium-indium-phosphide (InGaAlP) lasers with different wavelengths and powers. The beneficial effects of phototherapy using low-energy
Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
Jian Wu et al.
Nano letters, 9(9), 3252-3257 (2009-08-15)
We report the first observation of stimulated Raman scattering (SRS) from semiconductor nanowires (SNWs). Using continuous wave (CW) excitation (514.5 nm), very strong nonlinear SRS was observed in backscattering from short segments of crystalline GaP NWs with diameter d =
G Chen et al.
Nano letters, 8(5), 1341-1346 (2008-04-22)
We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire.
I Cestier et al.
Optics express, 19(7), 6093-6099 (2011-04-01)
We describe dynamical four wave mixing (FWM) functionalities of an GaInP photonic crystal waveguide. A W1 waveguide was used to wavelength convert 100 ps pulses and for sampling a 10.56 Gbit/s data stream so as to time demultiplex it into
View All Related Papers

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