추천 제품
Grade
certified reference material
Agency
IRMM®
제조업체/상표
JRC
저항도
13-16 μΩ-cm, 20°C
bp
4742 °C (lit.)
mp
2468 °C (lit.)
density
8.57 g/mL at 25 °C (lit.)
응용 분야
general analytical
형식
matrix material
SMILES string
[Nb]
InChI
1S/Nb
InChI key
GUCVJGMIXFAOAE-UHFFFAOYSA-N
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분석 메모
For more information please see:
IRMM526C
IRMM526C
법적 정보
IRMM is a registered trademark of European Commission
Storage Class Code
13 - Non Combustible Solids
WGK
nwg
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
가장 최신 버전 중 하나를 선택하세요:
Christos D Malliakas et al.
Journal of the American Chemical Society, 135(5), 1719-1722 (2013-01-23)
2H-NbSe(2) is a canonical Charge-Density-Wave (CDW) layered material the structural details of which remained elusive. We report the detailed structure of 2H-NbSe(2) below the CDW transition using a (3 + 2)-dimensional crystallographic approach on single crystal X-ray diffraction data collected
Jason S Pelc et al.
Optics express, 20(25), 27510-27519 (2012-12-25)
Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. We implement a downconversion quantum interface, where the single photons emitted from a semiconductor quantum dot at 910 nm are downconverted to 1560 nm
Tzyy-Jiann Wang et al.
Optics express, 20(27), 28119-28124 (2012-12-25)
We report ultra-smooth LiNbO(3) microdisk resonators fabricated by selective ion implantation, chemical etching, and thermal treatment. The undercut microdisk structure is produced by chemically etching the buried lattice damage layer formed by selective ion implantation. By thermal treatment, surface tension
Kulbir Kaur Ghuman et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085501-085501 (2013-01-25)
A systematic study of electronic structure and band gap states is conducted to analyze the monodoping and charge compensated codoping of rutile TiO(2) with Rh and Nb, using the DFT + U approach. Doping of rutile TiO(2) with Rh atoms induces hybridized
Huaxiang Yi et al.
Optics express, 20(25), 27562-27568 (2012-12-25)
We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also
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