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215066

Sigma-Aldrich

Gallium(III) oxide

≥99.99% trace metals basis

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Synonym(s):
Gallium trioxide
Empirical Formula (Hill Notation):
Ga2O3
CAS Number:
12024-21-4
Molecular Weight:
187.44
EC Number:
234-691-7
MDL number:
MFCD00011020
PubChem Substance ID:
24852864
NACRES:
NA.23

Quality Level

100

Assay

≥99.99% trace metals basis

form

(crystalline powder)

reaction suitability

reagent type: catalyst
core: gallium

density

5.88 g/mL at 25 °C

SMILES string

O=[Ga]O[Ga]=O

InChI

1S/2Ga.3O

InChI key

QZQVBEXLDFYHSR-UHFFFAOYSA-N

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This Item
410527393541483702
Gallium(III) oxide ≥99.99% trace metals basis

Sigma-Aldrich

215066

Gallium(III) oxide

Gallium(III) sulfide 99.99% trace metals basis

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Gallium(III) sulfide

Gallium(III) acetylacetonate 99.99% trace metals basis

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Gallium(III) acetylacetonate

Germanium(IV) oxide ≥99.99% trace metals basis

Sigma-Aldrich

483702

Germanium(IV) oxide

form

(crystalline powder)

form

-

form

solid

form

powder

density

5.88 g/mL at 25 °C

density

3.65 g/mL at 25 °C (lit.)

density

-

density

4.23 g/cm3

reaction suitability

reagent type: catalyst
core: gallium

reaction suitability

reagent type: catalyst
core: gallium

reaction suitability

-

reaction suitability

-

Quality Level

100

Quality Level

100

Quality Level

100

Quality Level

100

General description

Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.

Application

Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device.

Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.

It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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G Wilma Busser et al.
ChemSusChem, 5(11), 2200-2206 (2012-10-24)
The deposition of hydrogen evolution sites on photocatalysts is a crucial step in the multistep process of synthesizing a catalyst that is active for overall photocatalytic water splitting. An alternative approach to conventional photodeposition was developed, applying the photocatalytic reforming
The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.
Hyo Jae Yoon et al.
Angewandte Chemie (International ed. in English), 51(19), 4658-4661 (2012-04-17)
Liang Qiao et al.
Proteomics, 11(17), 3501-3509 (2011-07-14)
β-Ga(2)O(3) is a wide-band-gap semiconductor having strong oxidation ability under light irradiation. Herein, the steel target plates modified with β-Ga(2)O(3) nanoparticles have been developed to carry out in-source photo-catalytic oxidative reactions for online peptide tagging during laser desorption/ionization mass spectrometry
Liang Li et al.
Nanoscale, 3(3), 1120-1126 (2011-01-05)
We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The photodetectors demonstrate high selectivity towards 250 nm light, fast response times of less than 0.3 s, and a large photocurrent to dark current
Weirong Zhao et al.
Journal of hazardous materials, 192(3), 1548-1554 (2011-07-20)
Mesoporous wide bandgap semiconductors offer high photocatalytic oxidation and mineralization activities. In this study, mesoporous β-Ga(2)O(3) diamond nanorods with 200-300 nm in diameter and 1.0-1.2 μm in length were synthesized via a urea-based hydrothermal method using polyethylene glycol (PEG) as
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