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About This Item
Linear Formula:
SiC
CAS Number:
Molecular Weight:
40.10
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
form
powder
Quality Level
particle size
-200 mesh
mp
2700 °C (lit.)
density
3.22 g/mL at 25 °C (lit.)
SMILES string
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
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General description
Silicon carbide (SiC) is a semiconductor based material that consists of a closed packed stacking of double layers of silicon and carbon. It has an excellent thermo-mechanical property that makes it useful in a variety of electronic and optoelectronic applications.
Application
SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices(OLEDs), UV detectors, high temperature electronics (nuclear electronics), high frequency devices
Storage Class
11 - Combustible Solids
wgk_germany
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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Properties of silicon carbide (1995)
Development of SiC-Si composites with fine-grained SiC microstructures
Wilhelm M, et al.
J. Eur. Ceram. Soc., 19(12), 2155-2163 (1999)
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
Whitaker B, et al.
IEEE Transactions on Power Electronics, 29(5), 2606-2617 (2013)
Optical polarization of nuclear spins in silicon carbide
Falk AL, et al.
Physical Review Letters, 114(24), 247603-247603 (2015)
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