593044
Aluminum nitride
nanopowder, <100 nm particle size
Synonym(s):
Aluminium nitride
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All Photos(3)
About This Item
Linear Formula:
AlN
CAS Number:
Molecular Weight:
40.99
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
form
nanopowder
Quality Level
particle size
<100 nm
mp
>2200 °C (lit.)
density
3.26 g/mL at 25 °C (lit.)
SMILES string
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
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General description
Aluminum nitride (AlN) is a wide bandgap semiconductor with exceptional thermal conductivity, high electrical insulation, and piezoelectric properties. It is widely used in electronics, such as in high-power and high-frequency devices, as well as in optoelectronics for UV light emitters. Additionally, AlN is utilized in biomedical devices due to its biocompatibility.
Application
- This review explores the significant properties of aluminum nitride in the context of semiconductor materials, discussing its large bandgap and wide transparency range, which are advantageous for ultraviolet to mid-infrared applications (Li et al., 2021).
signalword
Danger
hcodes
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
target_organs
Lungs
Storage Class
4.3 - Hazardous materials which set free flammable gases upon contact with water
wgk_germany
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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Morphologically selective synthesis of nanocrystalline aluminum nitride.
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Nanocrystalline aluminum nitride: II, sintering and properties.
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Nanocomposites consisting of cellulose nanofibrils (CNFs) and nano-aluminum nitride (AlN) were prepared using a simple vacuum-assisted filtration process. Bleached sugarcane bagasse pulp was treated with potassium hydroxide and sodium chlorite, and was subsequently ultra-finely ground and homogenized to obtain CNFs.
Mohammad T Baei et al.
Journal of molecular modeling, 18(9), 4427-4436 (2012-05-17)
Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the
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