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On the origin of contact resistances of organic thin film transistors.

Advanced materials (Deerfield Beach, Fla.) (2012-06-26)
Marko Marinkovic, Dagmawi Belaineh, Veit Wagner, Dietmar Knipp
ABSTRACT

A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.

MATERIALS
Product Number
Brand
Product Description

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Tris[N,N-bis(trimethylsilyl)amide]samarium(III), 98%
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