추천 제품
Quality Level
분석
≥99.9% trace metals basis
양식
powder
입자 크기
<1 μm
density
3.44 g/mL at 25 °C (lit.)
SMILES string
N12[Si]34N5[Si]16N3[Si]25N46
InChI
1S/N4Si3/c1-5-2-6(1)3(5)7(1,2)4(5)6
InChI key
HQVNEWCFYHHQES-UHFFFAOYSA-N
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관련 카테고리
일반 설명
Silicon nitride based ceramics possess high fracture toughness, hardness and wear resistance, resistance to corrosion, thermal stability. Two known polymorphs of silicon nitride exist, alpha and beta Si3N4, both have hexagonal structure. A study shows that a third state, cubic spinel structure, has also been synthesized.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
dust mask type N95 (US), Eyeshields, Gloves
Synthesis of cubic silicon nitride
Zerr A, et al
Nature, 400, 340-342 null
Silicon Nitride and Related Materials
Riley FR
Journal of the American Ceramic Society. American Ceramic Society, 83(2), 245-265 (2000)
Francesco Mazzotta et al.
Nanotechnology, 23(41), 415304-415304 (2012-09-29)
One of the primary advantages of nanoscale sensors is that they often can provide conceptually new ways of performing sensing that are not feasible with their large-scale analogs. For example, the small size of nanoscale sensor elements, such as plasmonic
Weihua Guan et al.
Lab on a chip, 13(7), 1431-1436 (2013-02-16)
The intrinsic charging status at the dielectric-electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges
Tingyin Ning et al.
Optics express, 21(2), 2012-2017 (2013-02-08)
We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(³) (-3ω,ω,ω,ω) = (2.8 ± 0.6) ×
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