추천 제품
Quality Level
양식
powder or crystals
solid
반응 적합성
core: germanium
reagent type: reductant
mp
40-43 °C (lit.)
SMILES string
c1ccc(cc1)[GeH](c2ccccc2)c3ccccc3
InChI
1S/C18H16Ge/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18/h1-15,19H
InChI key
NXHORDQDUDIXOS-UHFFFAOYSA-N
일반 설명
Triphenylgermanium hydride is a hydrogen donor.
애플리케이션
It may be used in the isomerization of (Z) alkene.1 TEMPO (2,2,6,6-Tetramethylpiperidinyloxy) reacts with triphenylgermanium hydride to form its corresponding germyl radical. 2
포장
Packaged in glass bottles
신호어
Warning
유해 및 위험 성명서
Hazard Classifications
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
dust mask type N95 (US), Eyeshields, Gloves
Vanessa A Béland et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 26(56), 12751-12757 (2020-04-16)
The development of batteries and fuel cells has brought to light a need for carbon anode materials doped homogeneously with electrocatalytic metals. In particular, combinations of electrocatalysts in carbon have shown promising activity. A method to derive functional carbon materials
Palladium (II)-catalyzed isomerization of olefins with tributyltin hydride.
Kim IS, et al.
The Journal of Organic Chemistry, 73(14), 5424-5426 (2007)
Theresia Ahrens et al.
Dalton transactions (Cambridge, England : 2003), 45(11), 4716-4728 (2016-02-11)
The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl complex [Rh(GePh3)(PEt3)3] (3). Alternatively, treatment of the methyl complex [Rh(CH3)(PEt3)3] (4) with HGePh3 furnished
Grace Flynn et al.
Nano letters, 16(1), 374-380 (2015-12-18)
Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent
E Mullane et al.
Physical chemistry chemical physics : PCCP, 17(10), 6919-6924 (2015-02-14)
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated catalytic layer placed in the vapour zone of a high boiling point
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