추천 제품
형태
powder
Quality Level
mp
330-335 °C (lit.)
λmax
299 nm
OLED 기기 성능
ITO/CuPc/NPD/Alq3:Rubrene (5%): DCM2 (2%)/Alq3/Mg:In
ITO/PEDOT:PSS/EHCz:Rubrene (1 wt%)/Cs2CO3:ITO
SMILES string
c1ccc(cc1)-c2c3ccccc3c(-c4ccccc4)c5c(-c6ccccc6)c7ccccc7c(-c8ccccc8)c25
InChI
1S/C42H28/c1-5-17-29(18-6-1)37-33-25-13-14-26-34(33)39(31-21-9-3-10-22-31)42-40(32-23-11-4-12-24-32)36-28-16-15-27-35(36)38(41(37)42)30-19-7-2-8-20-30/h1-28H
InChI key
YYMBJDOZVAITBP-UHFFFAOYSA-N
유사한 제품을 찾으십니까? 방문 제품 비교 안내
애플리케이션
Reagent for chemiluminescence research and for transition metal complex ligation.
Reagent for chemiluminescence research and for transition metal complex ligation.
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
Eyeshields, Gloves, type N95 (US)
시험 성적서(COA)
제품의 로트/배치 번호를 입력하여 시험 성적서(COA)을 검색하십시오. 로트 및 배치 번호는 제품 라벨에 있는 ‘로트’ 또는 ‘배치’라는 용어 뒤에서 찾을 수 있습니다.
이미 열람한 고객
Inorganic Chemistry, 32, 1078-1078 (1993)
Advanced materials (Deerfield Beach, Fla.), 23(45), 5370-5375 (2011-10-18)
Commonly observed variations in photoluminescence (PL) spectra of crystalline organic semiconductors, including the appearance or enhancement of certain PL bands, are shown to originate from a small amount of structural disorder (e.g., amorphous inclusions embedded in a crystal), rather than
The journal of physical chemistry. A, 113(46), 12847-12856 (2009-10-14)
We present a theoretical study on the temperature-dependent absorption and photoluminescence spectroscopy of rubrene multichromophores by combining the time-dependent long-range-corrected density functional theory with the exciton model. The spectra of rubrene multichromophores up to heptamers are calculated, and the effects
The journal of physical chemistry. B, 113(14), 4578-4581 (2009-04-03)
The growth of rubrene (C(42)H(28), 5,6,11,12-tetraphenylnaphthacene) multilayer islands up to a thickness of six layers on a Au(111) surface has been investigated by scanning tunneling microscopy. The molecules self-organize in parallel twin rows, forming mirror domains of defined local structural
Advanced materials (Deerfield Beach, Fla.), 24(20), 2679-2684 (2012-04-14)
The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the
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