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264032

Sigma-Aldrich

Indium

powder, −100 mesh, 99.99% trace metals basis

Synonym(s):

Indium element

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About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

assay

99.99% trace metals basis

form

powder

resistivity

8.37 μΩ-cm

particle size

−100 mesh

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Application


  • Indium-containing semiconductors: Discusses the role of indium in semiconductor technology, relevant for both academia and material science, focusing on its application in indium-tin oxide and other indium compounds (Schwarz‐Schampera, 2014).

  • Recovery of indium from liquid crystal displays: This article presents methods for the recovery of indium from waste electronics, an area of significant interest for sustainable chemistry and materials science (Rocchetti et al., 2016).

  • The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants: Explores the chemical properties and reactions of indium in various oxidation states, relevant to environmental and materials chemistry (Detweiler et al., 2016).

pictograms

FlameExclamation mark

signalword

Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

4.1B - Flammable solid hazardous materials

wgk_germany

WGK 3

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


Certificates of Analysis (COA)

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A facile synthesis of 7-amino-3-desacetoxycephalosporanic acid derivatives by indium-mediated reduction of 3-iodomethylcephems in aqueous media.
Chae H, et al.
Tetrahedron Letters, 41(20), 3899-3901 (2000)
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
R C Longo et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01)
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a

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