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203424

Sigma-Aldrich

Indium(III) oxide

99.998% trace metals basis

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Synonym(s):
Diindium trioxide, Indium sesquioxide
Empirical Formula (Hill Notation):
In2O3
CAS Number:
Molecular Weight:
277.63
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

assay

99.998% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: indium

density

7.18 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[In]O[In]=O

InChI

1S/2In.3O

Inchi Key

SHTGRZNPWBITMM-UHFFFAOYSA-N

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1 of 4

This Item
203440289418632317
vibrant-m

203424

Indium(III) oxide

vibrant-m

203440

Indium(III) chloride

vibrant-m

289418

Indium(III) oxide

vibrant-m

632317

Indium(III) oxide

assay

99.998% trace metals basis

assay

99.999% trace metals basis

assay

99.99% trace metals basis

assay

99.9% trace metals basis

density

7.18 g/mL at 25 °C (lit.)

density

3.46 g/mL at 25 °C (lit.)

density

7.18 g/mL at 25 °C (lit.)

density

7.18 g/mL at 25 °C (lit.)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

-

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

reaction suitability

reagent type: catalyst
core: indium

reaction suitability

reagent type: catalyst
core: indium

reaction suitability

reagent type: catalyst
core: indium

reaction suitability

reagent type: catalyst
core: indium

application(s)

battery manufacturing

application(s)

-

application(s)

battery manufacturing

application(s)

-

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


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Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Jiefu Yin et al.
Inorganic chemistry, 51(12), 6529-6536 (2012-06-06)
We report here for the first time the hollow, metastable, single-crystal, rhombohedral In(2)O(3) (rh-In(2)O(3)) nanocrystals synthesized by annealing solvothermally prepared InOOH solid nanocrystals under ambient pressure at 400 °C, through a mechanism of the Kirkendall effect, in which pore formation
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode

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