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289418

Sigma-Aldrich

Indium(III) oxide

99.99% trace metals basis

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Synonym(s):
Diindium trioxide, Indium sesquioxide
Empirical Formula (Hill Notation):
In2O3
CAS Number:
Molecular Weight:
277.63
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

Assay

99.99% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: indium

density

7.18 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[In]O[In]=O

InChI

1S/2In.3O

InChI key

SHTGRZNPWBITMM-UHFFFAOYSA-N

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This Item
203424632317264032
Indium(III) oxide 99.99% trace metals basis

Sigma-Aldrich

289418

Indium(III) oxide

Indium(III) oxide 99.998% trace metals basis

Sigma-Aldrich

203424

Indium(III) oxide

Indium(III) oxide nanopowder, &lt;100&#160;nm particle size (TEM), 99.9% trace metals basis

Sigma-Aldrich

632317

Indium(III) oxide

Indium powder, &#8722;100&#160;mesh, 99.99% trace metals basis

Sigma-Aldrich

264032

Indium

form

powder

form

powder

form

nanopowder

form

powder

density

7.18 g/mL at 25 °C (lit.)

density

7.18 g/mL at 25 °C (lit.)

density

7.18 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

reaction suitability

reagent type: catalyst
core: indium

reaction suitability

reagent type: catalyst
core: indium

reaction suitability

reagent type: catalyst
core: indium

reaction suitability

-

application(s)

battery manufacturing

application(s)

battery manufacturing

application(s)

-

application(s)

-

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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The kinetics of phase transformation of colloidal In(2)O(3) nanocrystals (NCs) during their synthesis in solution was explored by a combination of structural and spectroscopic methods, including X-ray diffraction, transmission electron microscopy, and extended X-ray absorption fine structure spectroscopy. Johnson-Mehl-Avrami-Erofeyev-Kholmogorov (JMAEK)
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Mareike V Hohmann et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 23(33), 334203-334203 (2011-08-05)
The ionization potentials of In(2)O(3) films grown epitaxially by magnetron sputtering on Y-stabilized ZrO(2) substrates with (100) and (111) surface orientation are determined using photoelectron spectroscopy. Epitaxial growth is verified using x-ray diffraction. The observed ionization potentials, which directly affect

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