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357073

Sigma-Aldrich

Indium

wire, diam. 1.0 mm, 99.995% trace metals basis

Synonym(s):

Indium element

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About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

assay

99.995% trace metals basis

form

wire

resistivity

8.37 μΩ-cm

diam.

1.0 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Quantity

5.6 g = 1 m; 28 g = 5 m

pictograms

Health hazard

signalword

Danger

hcodes

Hazard Classifications

STOT RE 1 Inhalation

target_organs

Lungs

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk_germany

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


Certificates of Analysis (COA)

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Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
J S Fandiño et al.
Optics express, 21(3), 3726-3736 (2013-03-14)
We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
V M Katerynchuk et al.
Journal of nanoscience and nanotechnology, 12(11), 8856-8859 (2013-02-21)
The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be essentially dependent on surface topology of the oxide. The obtained results indicate that the

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