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vapor pressure
11.66 psi ( 20 °C)
Quality Level
assay
≥99.0% (GC)
form
liquid
autoignition temp.
842 °F
refractive index
n20/D 1.358 (lit.)
n20/D 1.359
bp
26-28 °C (lit.)
mp
−99 °C (lit.)
density
0.648 g/mL at 25 °C (lit.)
storage temp.
2-8°C
SMILES string
C[Si](C)(C)C
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
InChI key
CZDYPVPMEAXLPK-UHFFFAOYSA-N
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Application
Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.
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The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Organometallics, 20(23), 4939-4955 (2001)
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted
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