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87921

Sigma-Aldrich

Tetramethylsilane

≥99.0% (GC)

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Synonym(s):
TMS
Linear Formula:
Si(CH3)4
CAS Number:
Molecular Weight:
88.22
Beilstein/REAXYS Number:
1696908
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.22

vapor pressure

11.66 psi ( 20 °C)

Quality Level

assay

≥99.0% (GC)

form

liquid

autoignition temp.

842 °F

refractive index

n20/D 1.358 (lit.)
n20/D 1.359

bp

26-28 °C (lit.)

mp

−99 °C (lit.)

density

0.648 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

C[Si](C)(C)C

InChI

1S/C4H12Si/c1-5(2,3)4/h1-4H3

InChI key

CZDYPVPMEAXLPK-UHFFFAOYSA-N

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Application

Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.

pictograms

Flame

signalword

Danger

hcodes

pcodes

Hazard Classifications

Flam. Liq. 1

wgk_germany

WGK 3

flash_point_f

-16.6 °F

flash_point_c

-27 °C

ppe

Eyeshields, Faceshields, Gloves


Certificates of Analysis (COA)

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The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
Roy E Hoffman
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted

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