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901790

Sigma-Aldrich

Boron nitride suspension

Synonym(s):

2D-BN, 2D-Boron nitride, 2D-Boron nitride dispersion with nonionic surfactant, 2D-hBN, Hexagonal boron nitride

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About This Item

Linear Formula:
BN
UNSPSC Code:
12352302
NACRES:
NA.23

description

100-2000 nm
thickness < 3 layers

form

suspension

concentration

5 mg/mL in H2O

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General description

Boron nitride suspension (h-BN) (5 mg/mL in water) has a hexagonal bonded structure, with high mechanical strength and good thermal conductivity. It belongs to the class of hexagonal layered materials. It has a direct band gap of 5.8 eV and can be used as a dielectric layer in electronic devices.

Application

2D-Hexagonal boron nitride (2D-hBN) is a structural isomorph of graphene and it possesses high chemical, mechanical and thermal stability. However, unlike graphene, the 2D-hBN is a high band gap material. The 2D-hBN exhibits exotic optical and electrical properties and find applications in field effect transistors (FETs), photoelectric devices and UV detectors.
h-BN can also be used as a multifunctional additive in polymeric electrolytes for the formation of lithium ion batteries. It can also be used in the fabrication of photonic devices.

Storage Class

12 - Non Combustible Liquids

wgk_germany

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

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Two dimensional hexagonal boron nitride (2D-hBN): Synthesis, properties and applications.
Zhang K ,et al.
Journal of Material Chemistry C, 5, 11992-11992 (2017)
Boron nitride substrates for high-quality graphene electronics.
Dean CR, et al.
Nature Nanotechnology, 5(10), 722-722 (2010)
2D boron nitride nanoflakes as a multifunctional additive in gel polymer electrolytes for safe, long cycle life and high rate lithium metal batteries.
Shim J, et al.
Energy & Environmental Science, 10(9), 1911-1916 (2017)
Light-emitting diodes by bandstructure engineering in van der Waals heterostructures.
Withers F, et al.
Nature Materials, 14, 301-301 (2015)
Hexagonal boron nitride for deep ultraviolet photonic devices.
Jiang HX and Lin JY
Semiconductor Science and Technology, 29(8), 084003-084003 (2014)
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