Boron nitride suspension (h-BN) (5 mg/mL in water) has a hexagonal bonded structure, with high mechanical strength and good thermal conductivity. It belongs to the class of hexagonal layered materials. It has a direct band gap of 5.8 eV and can be used as a dielectric layer in electronic devices.

2D-Hexagonal boron nitride (2D-hBN) is a structural isomorph of graphene and it possesses high chemical, mechanical and thermal stability. However, unlike graphene, the 2D-hBN is a high band gap material. The 2D-hBN exhibits exotic optical and electrical properties and find applications in field effect transistors (FETs), photoelectric devices and UV detectors.

h-BN can also be used as a multifunctional additive in polymeric electrolytes for the formation of lithium ion batteries. It can also be used in the fabrication of photonic devices.