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205184

Sigma-Aldrich

Hexachlorodisilane

96%

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Synonym(s):
1,1,1,2,2,2-Hexachlorodisilane, Disilicon hexachloride, HCDS
Linear Formula:
(SiCl3)2
CAS Number:
Molecular Weight:
268.89
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Assay

96%

form

liquid

refractive index

n20/D 1.475 (lit.)

bp

144-145.5 °C (lit.)

density

1.562 g/mL at 25 °C (lit.)

SMILES string

Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl

InChI

1S/Cl6Si2/c1-7(2,3)8(4,5)6

InChI key

LXEXBJXDGVGRAR-UHFFFAOYSA-N

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This Item
2356955261986944
Hexachlorodisilane 96%

Sigma-Aldrich

205184

Hexachlorodisilane

Hexamethyldisilazane for GC derivatization, LiChropur™, ≥99.0% (GC)

Supelco

52619

Hexamethyldisilazane

Hexamethyldisilazane produced by Wacker Chemie AG, Burghausen, Germany, ≥97.0% (GC)

Sigma-Aldrich

86944

Hexamethyldisilazane

bp

144-145.5 °C (lit.)

bp

175-176 °C (lit.)

bp

125 °C (lit.)

bp

125 °C (lit.)

density

1.562 g/mL at 25 °C (lit.)

density

0.956 g/mL at 25 °C (lit.)

density

-

density

-

assay

96%

assay

98%

assay

≥99.0% (GC)

assay

≥97.0% (GC)

form

liquid

form

liquid

form

liquid

form

liquid

General description

Hexachlorodisilane (HCDS) is a chlorosilane used as a precursor for producing disilanes. It is a dioxidizer that is used in the production of silicon films and silicon nitride based films.

Application

HCDS can be used in the fabrication of silica aerogels by chemical vapor deposition (CVD), which can be potentially used as encapsulating agents and thermal insulators. It can also be used to synthesize 1,1,1,2,2,2-hexaamino-disilanes using CVD, which forms silicon-based films for microelectronic-based applications.
HCDS may be used as a reducing agent. It may be combined with ammonia to form silicon nitride by chemical vapor deposition(CVD) technique.

accessory

Product No.
Description
Pricing

Pictograms

Corrosion

Signal Word

Danger

Hazard Statements

Hazard Classifications

Skin Corr. 1B

Supplementary Hazards

Storage Class Code

8A - Combustible, corrosive hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Chemical vapor deposition of silicon films using hexachlorodisilane
Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings, 77, 709-709 (1986)
Film Properties of Low?k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia.
Tanaka M , et al.
Journal of the Electrochemical Society, 147(6), 2284-2289 (2000)
The Raman Spectrum of Hexachlorodisilane
Katayama M, et al.
J. Chem. Phys. , 18(4), 506-509 (1950)
Z Yu et al.
Journal of chromatography. A, 903(1-2), 183-191 (2001-01-12)
Carbon isotopic compositions of aetio I occurring in the form of free-base, nickel, demetallation, dihydroxysilicon(IV) and bis(tert.-butyldimethylsiloxy)silicon(IV) [(tBDMSO)2Si(IV)] have shown that it has experienced no obvious isotope fractionation during the synthesis of [(tBDMSO)2Si(IV)] porphyrin from aetio I. Here, aetio I
Enhancing mechanical properties of silica aerogels
Obrey, K. A., Wilson, K. V., & Loy, D. A.
Journal of Non-Crystalline Solids, 375(19), 3435-3441 (2011)

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