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751774

Tris(diethylamido)(tert-butylimido)niobium(V)

packaged for use in deposition systems

Synonym(s):

(tert)-Butyliminotris(diethylamino)niobium, tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium, t-Butylimido tris(diethylamido)niobium(V)

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About This Item

Linear Formula:
((CH3)6N)3NbN(CH3)3
CAS Number:
Molecular Weight:
380.41
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23
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Quality Level

form

liquid

reaction suitability

core: niobium

density

1.015 g/mL at 25 °C

SMILES string

CCN(CC)[Nb](=NC(C)(C)C)(N(CC)CC)N(CC)CC

InChI

1S/C4H9N.3C4H10N.Nb/c1-4(2,3)5;3*1-3-5-4-2;/h1-3H3;3*3-4H2,1-2H3;/q;3*-1;+3

InChI key

CBCDPJRPMPTFKA-UHFFFAOYSA-N

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General description

Tris(diethylamido)(tert-butylimido)niobium(V) (TBTDEN) is a volatile, thermally stable liquid used as a niobium precursor for thin-film deposition. It offers high vapor pressure and clean decomposition, making it ideal for applications requiring materials with high dielectric constants and robust barrier layers.

Application

Tris(diethylamido)(tert-butylimido)niobium(V) is used as a niobium precursor
  • In atomic layer deposition to create niobium-doped tin oxide (NTO), a conductive material. These NTO scaffolds provide a large surface area for thin platinum layers, improving electron transfer in dye-sensitized solar cells.
  • In metal-organic chemical vapor deposition (MOCVD) to grow niobium nitride (NbN) thin films. These films, deposited on silicon wafers, offers good conductivity and are suitable for electronic applications such as gate stacks.

pictograms

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Danger

Hazard Classifications

Eye Irrit. 2 - Flam. Liq. 2 - STOT SE 3 - Water-react 2

target_organs

Respiratory system

Storage Class

4.3 - Hazardous materials which set free flammable gases upon contact with water

wgk_germany

WGK 3

flash_point_f

26.6 °F - closed cup

flash_point_c

-3 °C - closed cup


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Arne Baunemann et al.
Dalton transactions (Cambridge, England : 2003), 28(28), 3715-3722 (2008-07-11)
Novel mixed amido/imido/guanidinato complexes of niobium are reported. The complexes were synthesized by insertion of two equivalents of di-isopropylcarbodiimide (i-Pr-cdi) or bis-cyclohexylcarbodiimide (Cy-cdi) respectively, into the niobium-amido bonds of [Nb(NR(2))(3)(N-t-Bu)] (, R = Me; , R = Et) starting out
Thiede; T.; et al
Electrochemical Society Transactions, 16, 229-229 (2008)
Thiede; T.B.; et al
Chem. Vap. Deposition, 15, 334-334 (2009)
Chiu; J.-T.; et al
J. Chin. Chem. Soc., 45, 355-355 (1998)

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