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Tetrakis(dimethylamido)hafnium(IV)

packaged for use in deposition systems

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Synonym(s):
TDMAH, Tetrakis(dimethylamino)hafnium(IV)
Linear Formula:
[(CH3)2N]4Hf
CAS Number:
Molecular Weight:
354.79
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Quality Level

assay

≥99.99% (trace metals analysis)

form

low-melting solid

reaction suitability

core: hafnium

mp

26-29 °C (lit.)

density

1.098 g/mL at 25 °C

SMILES string

CN(C)[Hf](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

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553123553131455202
Tetrakis(dimethylamido)hafnium(IV) packaged for use in deposition systems

666610

Tetrakis(dimethylamido)hafnium(IV)

Tetrakis(diethylamido)hafnium(IV) 99.99%

455202

Tetrakis(diethylamido)hafnium(IV)

assay

≥99.99% (trace metals analysis)

assay

≥99.99% trace metals basis

assay

≥99.99% trace metals basis

assay

99.99%

mp

26-29 °C (lit.)

mp

<-50 °C

mp

-

mp

-

density

1.098 g/mL at 25 °C

density

1.324 g/mL at 25 °C (lit.)

density

1.049 g/mL at 25 °C (lit.)

density

1.249 g/mL at 25 °C (lit.)

reaction suitability

core: hafnium

reaction suitability

core: hafnium

reaction suitability

core: zirconium

reaction suitability

core: hafnium

General description

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.

Application

Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.

pictograms

FlameCorrosion

signalword

Danger

Hazard Classifications

Flam. Sol. 1 - Skin Corr. 1B - Water-react 2

supp_hazards

Storage Class

4.3 - Hazardous materials, which set free flammable gases upon contact with water

wgk_germany

WGK 3

flash_point_f

109.4 °F - closed cup

flash_point_c

43 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges


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The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition
Monsma D, Becker J
Material Matters, 1(3), 5-5 (2006)
Applied Physics Letters, 91, 193503-193503 (2007)
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Hausmann DM, Gordon RG
Journal of Crystal Growth, 249, 251-261 (2003)
High Purity Metalorganic Precursors for CPV Device Fabrication
Rushworth S
Material Matters, 5(4) null

Articles

igma-Aldrich.com presents an article regarding the savannah ALD system - an excellent tool for atomic layer deposition.

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

High Purity Metalorganic Precursors for CPV Device Fabrication

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

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