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725471

Sigma-Aldrich

Bis(methyl-η5−cyclopentadienyl)methoxymethylzirconium

packaged for use in deposition systems

Synonym(s):

ZRCMMM, ZrD-CO4

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About This Item

Linear Formula:
Zr(CH3C5H4)2CH3OCH3
Molecular Weight:
295.53
MDL number:
MFCD16875687
UNSPSC Code:
12352103
PubChem Substance ID:
329764163
NACRES:
NA.23

form

liquid

reaction suitability

core: zirconium

color

colorless

bp

110 °C/0.5 mmHg (lit.)

density

1.27 g/mL±0.01 g/mL at 25 °C (lit.)

SMILES string

C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC

InChI

1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1

InChI key

LFGIFPGCOXPKMG-UHFFFAOYSA-N

Related Categories

General description

Atomic number of base material: 40 Zirconium

Application

Precursors Packaged for Depositions Systems
Advanced precursor for atomic layer deposition of ZrO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

Features and Benefits

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

Packaging

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.

pictograms

Exclamation mark
GHS07

signalword

Warning

Hazard Classifications

Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2

Storage Class

10 - Combustible liquids not in Storage Class 3

wgk_germany

WGK 3

flash_point_f

226.4 °F

flash_point_c

108 °C

Certificates of Analysis (COA)

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J. W. Elama
Applied Physics Letters, 91, 253123-253123 (2007)
High-k gate dielectrics: current status and material properties considerations
Wilk, G.D.; Wallace, R.M.; Anthony, J.M.
Journal of Applied Physics, 89, 5243-5243 (2001)
Gutsche, M.; Seidl, H.; Luetzen J.; Birner, A.;
International Electron Devices Meeting, 18-18 (2001)

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