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MilliporeSigma

553123

Sigma-Aldrich

Tetrakis(ethylmethylamido)hafnium(IV)

≥99.99% trace metals basis

Synonym(s):

TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)

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$145.00

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Estimated to ship onMarch 26, 2025


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1 EA
$145.00

About This Item

Linear Formula:
[(CH3)(C2H5)N]4Hf
CAS Number:
Molecular Weight:
410.90
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

$145.00


Estimated to ship onMarch 26, 2025


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Quality Level

assay

≥99.99% trace metals basis

form

liquid

reaction suitability

core: hafnium

impurities

Purity excludes ~2000 ppm Zirconium

bp

78 °C/0.01 mmHg (lit.)

mp

<-50 °C

density

1.324 g/mL at 25 °C (lit.)

SMILES string

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

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This Item
BR156640BR156648BR156642
material

polypropylene , white

material

polypropylene , white

material

polypropylene , white

material

polypropylene , white

packaging

pack of 1 ea

packaging

pack of 1 ea

packaging

pack of 1 ea

packaging

pack of 1 ea

size

840 x 645 x 160 mm

size

225 x 180 x 45 mm

size

625 x 530 x 140 mm

size

300 x 240 x 70 mm

General description

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.

Application

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO2) thin films. Because HfO2 has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication.

TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100).[1] Researchers have also used it to deposit thin films ofHfO2 on 2D materials, like MoS2.[2]

[2]
TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf1-xZrxO2 thin films on MoS2 phototransistors.[3] Researchers have also deposited thin films of hafnium nitride (Hf3N4) by ALD alternatively pulsing TEMAH and ammonia.[4]

Features and Benefits

  • Thermally stable.
  • It has sufficient volatility and is suitable for use in vapor deposition.
  • Completely self-limiting surface reactions.

signalword

Danger

Hazard Classifications

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1

target_organs

Respiratory system

supp_hazards

Storage Class

4.3 - Hazardous materials which set free flammable gases upon contact with water

wgk_germany

WGK 3

flash_point_f

51.8 °F - closed cup

flash_point_c

11 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter


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Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 8, 199-204 (2002)
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides.
Becker J S, et al.
Chemistry of Materials, 3497?3501-3497?3501 (2004)

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