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553123

Sigma-Aldrich

Tetrakis(ethylmethylamido)hafnium(IV)

≥99.99% trace metals basis

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Synonym(s):
TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
Linear Formula:
[(CH3)(C2H5)N]4Hf
CAS Number:
Molecular Weight:
410.90
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Quality Level

assay

≥99.99% trace metals basis

form

liquid

reaction suitability

core: hafnium

impurities

Purity excludes ~2000 ppm Zirconium

bp

78 °C/0.01 mmHg (lit.)

mp

<-50 °C

density

1.324 g/mL at 25 °C (lit.)

SMILES string

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

InChI key

NPEOKFBCHNGLJD-UHFFFAOYSA-N

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This Item
553131455202725544
Tetrakis(diethylamido)hafnium(IV) 99.99%

455202

Tetrakis(diethylamido)hafnium(IV)

form

liquid

form

liquid

form

liquid

form

liquid

mp

<-50 °C

mp

-

mp

-

mp

<-50 °C

density

1.324 g/mL at 25 °C (lit.)

density

1.049 g/mL at 25 °C (lit.)

density

1.249 g/mL at 25 °C (lit.)

density

1.324 g/mL at 25 °C (lit.)

bp

78 °C/0.01 mmHg (lit.)

bp

81 °C/0.1 mmHg (lit.)

bp

130 °C/0.01 mmHg (lit.)

bp

78 °C/0.01 mmHg (lit.)

impurities

Purity excludes ~2000 ppm Zirconium

impurities

-

impurities

-

impurities

-

General description

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.

Application

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO2) thin films. Because HfO2 has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication.

TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100). Researchers have also used it to deposit thin films ofHfO2 on 2D materials, like MoS2.


TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf1-xZrxO2 thin films on MoS2 phototransistors. Researchers have also deposited thin films of hafnium nitride (Hf3N4) by ALD alternatively pulsing TEMAH and ammonia.

Features and Benefits

  • Thermally stable.
  • It has sufficient volatility and is suitable for use in vapor deposition.
  • Completely self-limiting surface reactions.

accessory

Product No.
Description
Pricing

signalword

Danger

Hazard Classifications

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1

target_organs

Respiratory system

supp_hazards

Storage Class

4.3 - Hazardous materials, which set free flammable gases upon contact with water

wgk_germany

WGK 3

flash_point_f

51.8 °F - closed cup

flash_point_c

11 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter


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Customers Also Viewed

Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 8, 199-204 (2002)
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides.
Becker J S, et al.
Chemistry of Materials, 3497?3501-3497?3501 (2004)

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