모든 사진(1)
About This Item
Linear Formula:
Re2(CO)10
CAS Number:
Molecular Weight:
652.52
EC Number:
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.23
추천 제품
Quality Level
분석
98%
양식
powder or crystals
반응 적합성
core: rhenium
reagent type: catalyst
mp
170 °C (dec.) (lit.)
SMILES string
[ReH].[ReH].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+]
InChI
1S/10CO.2Re/c10*1-2;;
InChI key
ZIZHEHXAMPQGEK-UHFFFAOYSA-N
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일반 설명
Dirhenium decacarbonyl (Re2(CO)10) is a transition metal carbonyl widely used as a precursor in the chemical vapor deposition (CVD) of metals and the fabrication of composite materials. The endothermic nature of the decomposition of Re2(CO)10 allows for uniform deposition of metallic or alloy coatings on the substrate.
애플리케이션
Dirhenium decacarbonyl can be used as a precursor to synthesize:
- Re nanoparticles via pulsed-laser decomposition.
- Amide functionalized Re(I) based dinuclear metallacycles that can selectively inhibit certain cancer cells.
- Twisted ultrathin rhenium disulfide nanoribbons encapsulated in single-walled carbon nanotubes.
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Acute Tox. 3 Inhalation
Storage Class Code
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
dust mask type N95 (US), Eyeshields, Gloves
이미 열람한 고객
Petros M Sakkas et al.
Ultrasonics sonochemistry, 69, 105250-105250 (2020-07-16)
Rhenium oxide nanoparticles have been prepared using ultrasonication at 20 kHz. Samples characterization was committed via SEM-EDX, TEM, XRD, and Raman spectroscopy. Various experimental parameters were examined, including precursor/substrate amounts, ultrasonication intensity, and type of solvent used. Insights to the agglomeration
Azimkhan Kozhakhmetov et al.
Advanced materials (Deerfield Beach, Fla.), 32(50), e2005159-e2005159 (2020-11-11)
Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next-generation electronic, logic-memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here
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