추천 제품
일반 설명
Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.
애플리케이션
Buffered oxide etchant (BOE) 6:1 with surfactant may be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It may also be used in a buffer oxide etchant method for the fabrication of micro biochip.
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Acute Tox. 1 Dermal - Acute Tox. 2 Inhalation - Acute Tox. 2 Oral - Eye Dam. 1 - Skin Corr. 1A
Storage Class Code
6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
WGK
WGK 2
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
시험 성적서(COA)
제품의 로트/배치 번호를 입력하여 시험 성적서(COA)을 검색하십시오. 로트 및 배치 번호는 제품 라벨에 있는 ‘로트’ 또는 ‘배치’라는 용어 뒤에서 찾을 수 있습니다.
Effect of passivation on AlGaN/GaN HEMT device performance
2000 IEEE international symposium on compound semiconductors, 357-363 (2000)
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy
Gonzalez-Posada F, et al.
Applied Surface Science, 253(14), 6185-6190 (2007)
Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology
Byun I, et al.
Microelectronics Journal, 39(5), 717-722 (2008)
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