920932
Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer
diam. 100 mm (4 in.)
동의어(들):
Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene
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모든 사진(5)
About This Item
실험식(Hill 표기법):
BN
CAS Number:
Molecular Weight:
24.82
MDL number:
UNSPSC 코드:
12352302
NACRES:
NA.23
추천 제품
설명
Monolayer h-BN
hBN Coverage: 100% with sporadic adlayers
Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1
Orientation: <1-0-0>
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Substrate
Type/Doping: P/B
Wafer Thickness : 500 ± 50 μm
Oxide Thickness: 300 nm
Resistivity: 1 – 10 (ohm/cm)
Quality Level
직경
100 mm (4 in.)
과립 크기
>4 μm
SMILES string
B#N
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
유사한 제품을 찾으십니까? 방문 제품 비교 안내
애플리케이션
Monolayer hexagonal boron nitride (h-BN), also known as ″white graphene″, is a wide-bandgap 2D crystal (∼6 eV that can be tuned to ∼2 eV) with exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- Insulating/transparent coatings.
저장 및 안정성
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
Storage Class Code
13 - Non Combustible Solids
WGK
WGK 3
가장 최신 버전 중 하나를 선택하세요:
Monolayer to Bulk Properties of Hexagonal Boron Nitride.
Wickramaratne D, et al.
The Journal of Physical Chemistry C, 122(44), 25524-25529 (2018)
Pablo Ares et al.
Advanced materials (Deerfield Beach, Fla.), 32(1), e1905504-e1905504 (2019-11-19)
2D hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Furthermore, in recent years hBN crystals have become the material
Luigi Stagi et al.
Materials (Basel, Switzerland), 12(23) (2019-11-30)
The discovery of graphene has paved the way for intense research into 2D materials which is expected to have a tremendous impact on our knowledge of material properties in small dimensions. Among other materials, boron nitride (BN) nanomaterials have shown
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries
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