추천 제품
일반 설명
Atomic number of base material: 13 Aluminum
애플리케이션
Tris(dimethylamido)aluminum(III) may be used as a precursor to aluminum nitride (AlN) thin films by organometallic chemical vapor deposition (OMCVD).
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Skin Corr. 1B - Water-react 1
보충제 위험성
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point (°F)
70.0 °F - closed cup
Flash Point (°C)
21.1 °C - closed cup
개인 보호 장비
Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges
Tris (dimethylamido) aluminum (III): An overlooked atomic layer deposition precursor.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 35(1), 01B128-01B128 (2017)
문서
High Purity Metalorganic Precursors for CPV Device Fabrication
Nanomaterials are considered a route to the innovations required for large-scale implementation of renewable energy technologies in society to make our life sustainable.
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