추천 제품
Quality Level
분석
≥99.99% trace metals basis
양식
liquid
반응 적합성
core: zirconium
bp
81 °C/0.1 mmHg (lit.)
density
1.049 g/mL at 25 °C (lit.)
SMILES string
CCN(C)[Zr](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Zr/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
InChI key
SRLSISLWUNZOOB-UHFFFAOYSA-N
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애플리케이션
Tetrakis(ethylmethylamido)zirconium(IV) can be used as a precursor for atomic layer deposition of zirconium fluoride. These metal fluorides are applied in the field of catalysis, optical films, and protective coatings for Li-ion battery electrodes.
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Eye Irrit. 2 - Flam. Liq. 2 - Skin Irrit. 2 - STOT SE 3 - Water-react 2
표적 기관
Respiratory system
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point (°F)
50.0 °F - closed cup
Flash Point (°C)
10 °C - closed cup
개인 보호 장비
Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter
이미 열람한 고객
ZrO2 monolayer as a removable etch stop layer for thermal Al2O3 atomic layer etching using hydrogen fluoride and trimethylaluminum
David R Zywotko, et al.
Chemistry of Materials, 32, 10055-10065 (2020)
Atomic layer deposition of metal fluorides using HF-pyridine as the fluorine precursor
Younghee Lee, et al.
Chemistry of Materials, 28, 2022-2032 (2016)
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