725471

Bis(methyl-η⁵−cyclopentadienyl)methoxymethylzirconium

packaged for use in deposition systems

• 동의어(들): ZRCMMM, ZrD-CO₄
• Linear Formula: Zr(CH₃C₅H₄)₂CH₃OCH₃
• Molecular Weight: 295.53
• MDL number: MFCD16875687
• UNSPSC 코드: 12352103
• PubChem Substance ID: 329764163
• NACRES: NA.23

속성

• 형태: liquid
• 반응 적합성: core: zirconium
• 색상: colorless
• bp: 110 °C/0.5 mmHg (lit.)
• density: 1.27 g/mL±0.01 g/mL at 25 °C (lit.)
• SMILES string: C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC
• InChI: 1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1
• InChI key: LFGIFPGCOXPKMG-UHFFFAOYSA-N

설명

일반 설명

Atomic number of base material: 40 Zirconium

애플리케이션

Precursors Packaged for Depositions Systems

Advanced precursor for atomic layer deposition of ZrO₂ thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO₂ and ZrO₂ films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

특징 및 장점

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

포장

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.

안전성 정보

• 픽토그램: GHS07
• 신호어: Warning
• 유해 및 위험 성명서: H302,H315,H319
• 예방조치 성명서: P305 + P351 + P338
• Hazard Classifications: Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2
• Storage Class Code: 10 - Combustible liquids not in Storage Class 3
• WGK: WGK 3
• Flash Point (°F): 226.4 °F
• Flash Point (°C): 108 °C