553123

Tetrakis(ethylmethylamido)hafnium(IV)

≥99.99% trace metals basis

• 동의어(들): TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
• Linear Formula: [(CH₃)(C₂H₅)N]₄Hf
• CAS Number: 352535-01-4
• Molecular Weight: 410.90
• MDL number: MFCD03427130
• UNSPSC 코드: 12352103
• PubChem Substance ID: 24879306
• NACRES: NA.23

속성

• Quality Level: 200
• 분석: ≥99.99% trace metals basis
• 형태: liquid
• 반응 적합성: core: hafnium
• 불순물: Purity excludes ~2000 ppm Zirconium
• bp: 78 °C/0.01 mmHg (lit.)
• mp: <-50 °C
• density: 1.324 g/mL at 25 °C (lit.)
• SMILES string: CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
• InChI: 1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
• InChI key: NPEOKFBCHNGLJD-UHFFFAOYSA-N

설명

일반 설명

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.

애플리케이션

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO₂) thin films. Because HfO₂ has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication.

TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100). Researchers have also used it to deposit thin films ofHfO₂ on 2D materials, like MoS₂.


TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf₁-xZrxO₂ thin films on MoS₂ phototransistors. Researchers have also deposited thin films of hafnium nitride (Hf₃N₄) by ALD alternatively pulsing TEMAH and ammonia.

특징 및 장점

• Thermally stable.
• It has sufficient volatility and is suitable for use in vapor deposition.
• Completely self-limiting surface reactions.

안전성 정보

• 픽토그램: GHS02,GHS05,GHS07
• 신호어: Danger
• 유해 및 위험 성명서: H225,H260,H302,H314,H335
• 예방조치 성명서: P210 - P231 + P232 - P280 - P301 + P312 - P303 + P361 + P353 - P305 + P351 + P338
• Hazard Classifications: Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
• 표적 기관: Respiratory system
• 보충제 위험성: EUH014
• Storage Class Code: 4.3 - Hazardous materials which set free flammable gases upon contact with water
• WGK: WGK 3
• Flash Point (°F): 51.8 °F - closed cup
• Flash Point (°C): 11 °C - closed cup
• 개인 보호 장비: Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter